vishay siliconix si1058x document number: 73894 s-81528-rev. c, 30-jun-08 www.vishay.com 1 n-channel 20-v (d-s) mosfet features ? halogen-free opti on available ?trenchfet ? power mosfet ? 100 % r g and uis tested applications ? load switch for portable devices product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 20 0.091 at v gs = 4.5 v 1.3 a 3.5 0.124 at v gs = 2.5 v 1.1 notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 650 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) a t a = 25 c i d 1.3 b, c a t a = 70 c 1.03 b, c pulsed drain current i dm 6 avalanche current l = 0.1 mh i as 7 repetitive avalanche energy e as 2.45 mj continuous source-drain diode current t a = 25 c i s 0.2 b, c a maximum power dissipation a t a = 25 c p d 0.236 b, c w t a = 70 c 0.151 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 5 s r thja 440 530 c/w steady state 540 650 sc- 8 9 (6-leads) 6 4 1 2 3 5 top v ie w d d g d d s marking code lot tracea b ility and date code part nu m b er code orderin g information: si105 8 x-t1-e3 (lead (p b )-free) si105 8 x-t1-ge3 (lead (p b )-free and halogen-free) w l t rohs compliant
www.vishay.com 2 document number: 73894 s-81528-rev. c, 30-jun-08 vishay siliconix si1058x notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient v ds /t j i d = 250 a 18.9 mv/c v gs(th) temperature coefficient v gs(th) /t j - 3.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.7 1.55 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1na v ds = 20 v, v gs = 0 v, t j = 85 c 10 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 6 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 1.3 a 0.076 0.091 v gs = 2.5 v, i d = 1.1 a 0.103 0.124 forward transconductance g fs v ds = 10 v, i d = 1.3 a 5.5 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 380 pf output capacitance c oss 75 reverse transfer capacitance c rss 45 total gate charge q g v ds = 10 v, v gs = 5 v, i d = 1.3 a 3.9 5.9 nc v ds = 10 v, v gs = 4.5 v, i d = 1.3 a 3.51 5.3 gate-source charge q gs 0.82 gate-drain charge q gd 0.61 gate resistance r g f = 1 mhz 4.3 5.6 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 15 i d ? 1.0 a, v gen = 4.5 v, r g = 1 812 ns rise time t r 20 30 turn-off delaytime t d(off) 13 18 fall time t f 69 drain-source body diode characteristics pulse diode forward current a i sm 6 body diode voltage v sd i s = 1.0 a 0.8 1.2 v body diode reverse recovery time t rr i f = 1.0 a, di/dt = 100 a/s 10.4 16 nc body diode reverse recovery charge q rr 3.7 5.7 ns reverse recovery fall time t a 6.5 reverse recovery rise time t b 3.9
document number: 73894 s-81528-rev. c, 30-jun-08 www.vishay.com 3 vishay siliconix si1058x typical characteristics t a = 25 c, unless otherwise noted output characteristics on-resistance vs. drain current q g - gate charge 0 1 2 3 4 5 6 0.0 0.6 1.2 1. 8 2.4 v gs = 2 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d v gs = 5 v thr u 3 v v gs = 2.5 v v gs = 1.5 v 0.00 0.06 0.12 0.1 8 0.24 0.30 0123456 v gs = 4.5 v i d - drain c u rrent (a) v gs = 2.5 v r ) n o ( s d ( ) e c n a t s i s e r - n o - 0 1 2 3 4 5 012345 i d = 1.3 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v gs v gs = 16 v v ds = 10 v transfer characteristics curves vs. temp capacitance on-resistance vs. junction temperature 0.0 0.3 0.6 0.9 1.2 1.5 1 . 8 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d c rss 0 100 200 300 400 500 600 04 8 12 16 20 c oss c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0.6 1.0 1.2 1.6 1 . 8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) r ) n o ( s d ce n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 2.5 v i d = 1.3 a v gs = 4.5 v i d = 1 a 0. 8 1.4
www.vishay.com 4 document number: 73894 s-81528-rev. c, 30-jun-08 vishay siliconix si1058x typical characteristics t a = 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.001 0.1 1 v sd ) a ( t n e r r u c e c r u o s - i s - so u rce-to-drain v oltage ( v ) 0.01 10 0. 8 0.6 0.4 0.2 0 1 t = 150 c j t = 25 c j 0.4 0.7 1.0 1.3 1 . 6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - temperat u re (c) v ) h t ( s g ( v ) r ds(on) vs. v gs vs. temperature single pulse power 0.04 0.0 8 0.12 0.16 0.20 012345 v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( ) e c n a t s i s e r - n o - t a = 25 c t a = 125 c i d = 1.3 a 0 3.0 5.0 1.0 2.0 ) w ( r e w o p time (s) 4.0 1000 100 10 1 0.1 0.01 safe operating area, junction-to-ambient * v gs minim u m v gs at w hich r ds(on) is specified 10 0.1 1 10 100 0.001 1 ) a ( t n e r r u c n i a r d - i d 0.01 v ds - drain-to-so u rce v oltage ( v ) 0.1 limited b y r ds(on) * t a = 25 c single p u lse b v dss limited 10 s dc 100 ms 1 s 10 ms 1 ms
document number: 73894 s-81528-rev. c, 30-jun-08 www.vishay.com 5 vishay siliconix si1058x typical characteristics t a = 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73894. normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 10 -1 100 sq u are w a v e p u lse d u ration (s) 10 1000 1 0.1 0.01 t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1 10 -4 0.2 0.1 0.05 d u ty cycle = 0.5 0.02 single p u lse 1. d u ty cycle, d = 2. per unit base = r thja = 540 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted n otes: t 1 p dm t 2
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
